• OLED offline measurements

  • OLED inline measurements

XELAS LAB/SCAN-OLED

NXT offers unique equipment to measure the layer thicknesses as well as refractive and absorption index of any kind of layer or stack, taking surface roughness into account. The system is designed and optimized for offline testing and is upgradable to future demands. Both organic and inorganic layers can be measured.

  • SCAN: 3-dimensional mapping of ITO layer thickness
Highlights of Xelas LAB-oled
Measurement of all OLED layers

● Layer thickness 3nm-500nm

● Spectral material properties n(λ)/k(λ)

● Surface roughness

● Refractive index profiling for ITO (N(z))

● Reflectance and transmittance spectra taken within milliseconds

Proven for all relevant layers and stacks

● Organic materials

● Dielectric layers

● Metallic, semireflective and conductive layers

Works for production and R&D!

● Offline testing of standard samples and special development cases

● Single-point measurements and serial measurements for a set of samples

● Cost-effective, modular setup

● Automatic internal calibration

● Contactless and non-destructive

● SCAN: x-y-mappings and one-directional scans

Upgradable to Optical Modelling

Unique AudioDev oscillatory model: Fast and easy design of own parameter sets for n&k

Offline measurement of an OLED sample
XELAS INLINE-OLED

NXT offers unique equipment to measure the layer thicknesses of any kind of layers or stacks. Surface roughness is taken into account as well.

The system’s optical RT-heads are designed and optimized for high-accurate and stable inline testing to guarantee absolute measurement results under production conditions.

  • Multi-channel setup for precise thickness control with Xelas INLINE-tfs
Highlights of Xelas INLINE-oled
Works under real process environments

● Special design of both R- and T-head for highest value stability with respect to height and tilt tolerances in production

● Inspection through glass windows: No affection of production during maintenance and service

● Automatic internal calibration

● Contactless and non-destructive

Measurement of all OLED layers

● Layer thickness 3nm-500nm

● Spectral material properties n(λ)/k(λ) incl. data base of common materials

● Surface roughness can be set

● Reflectance and transmittance spectra taken with highest accuracy

Proven for all relevant layers and stacks

● Auto-triggering or I/O with the line

● Monitoring of thicknesses in real-time, without disturbing the production process

● Fast measurement speed

Inline measurement head for R and T with flanges
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  • HELIOS-R8

  • HELIOS-TN

  • HELIOS-RC

Coating Measurement of Solar Cells

Reflectance, Layer Thickness of Poly-Si Coating of TOPCon Solar Wafers

  • Inline version of Helios-r8
  • Screenshot of the reflectance graph, thickness (value and trend chart) and refractive index value of Poly-Si coating.
Highlights of Helios-r8

In the production of modern, highly efficient TOPCon solar cells, Poly-Si layers are deposited on the etched rear side of the solar wafers over an extremely thin tunnel oxide layer. Both the layer thickness and the processdependent optical constants of the Poly-Si layer determine the quality of the solar cells, especially the selective passivating contact on the rear side. The Helios-r8 inline and offline measuring systems are perfect instruments to analyze and optimize the coating process of your solar wafers with Poly-Si. It enables you to measure the layer thicknesses and the spectral optical constants n&k of the layers on the etched rear sides of the wafers. Because of its high measurement speed, the Helios-r8 is perfectly suited for inline measurements and homogeneity measurements of the Poly-Si layers, where several points on the wafer surface are measured.

Functions of Helios-r8

The Helios-r8 systems are specifically designed for controlling poly-Si coatings on the rear side of TOPCon solar wafers. They provide precise measurements of layer thickness and optical constants (n&k), which are essential for ensuring high-quality selective backside passivation contacts. Available in inline or offline (manual or scan) versions, they provide fast and reliable results for production and laboratory use.

● Single-point measurement √

● Reflectance at user-definable wavelength √

● Coating layer thickness √

● User-definable quality limits √

● Good / Bad indication √

● Integrated fixed reference √

● Average Reflectance within a selectable wavelength interval √

● Manual single axis table √

● Automation full wafer mapping √

Measurement of Poly-Si Coated Wafers

● Offline and inline configurations

● Non-contact, non-destructive measurement

● Fast, static point-by-point or real-time inline measurement

Measurement Parameters

● Poly-Si layer thickness (50–450 nm)

● Refractive index n&k (3.0–4.5)

● Reflectance spectra

Wafer & Cell Compatibility

● TOPCon solar cells (n-type, p-type, bifacial)

● Etched rear side (acidic/alkaline, bare etched)

Key Features

● Integrated reference standards

● Insensitive to wafer rotation, tilt, distance, or surface roughness

● Very fast measurement (≤200ms per point)

● Easy operation with user-definable quality limits and good/bad indication

Coating Measurement of Solar Cells

Thickness and Refractive Index of Silicon Nitride

  • Inline version of Helios-rn
  • Example of the visualization of a reflection spectrum and a coating thickness measurement.
Highlights of Helios-tn

For wafer based solar cells the anti-reflective coating, surface passivation and diffusion barrier play an important role to achieve high solar cell efficiency and long term stability. Because of its excellent characteristics Silicon Nitride coating (a-SiNx:H) is widely used for this purpose. Process parameters like gas pressure and temperature of the cell during deposition have a strong influence on the layer thickness, colour and the optical constants n&k of Silicon Nitride. Traditionally it takes time and skills to obtain a precise coating distribution map to enable process optimization.

Measurement of Silicon Nitride

Using industry-proven spectrometer technology and proprietary measurement algorithms, Helios-tn combines speed, precise measurement and easy operation – all of which are needed to optimize processes at lowest cost and shortest line downtime.

Functions of Helios-tn

The Helios-tn systems are ideally suited for monitoring and controlling coating processes on silicon-based solar wafers. They offer highly precise.

Layer Thickness and Refractive Index of Silicon Nitride

● Offline / contactless and non-destructive

● High-speed mapping function

Works for all relevant Types

● mc- & pc-wafers (polished, rough or textured)

● 125x125mm / 156x156mm

Works for all relevant Types of Textures

● Isotropic and anisotropic chemically etched

● RIE (Reactive Ion Etched)

Works for all relevant Types of Textures

● PE-CVD

● Magnetron Sputtering

Easy Operation

● Pre-configured mapping templates

● No special skills required for operation

● Select recipe. Start measurement. GO!

Coating Measurement of Solar Cells

Total Reflectance, Color and Layer Thickness of Coated and Uncoated Silicon Solar Wafers

  • Inline version of Helios-rc
  • Example of the visualization of a reflection spectrum and a trend diagram.
Highlights of Helios-rc

The surface texturing of crystalline solar cells plays an important role to achieve high solar cell efficiencies. The texturing reduces reflectivity losses significantly and has a strong impact on the passivation of the cell. In addition to the texturing process step itself, the quality of the silicon material and the wafer sawing process have impact on the texture. Therefore, it is essential to gain detailed knowledge of the texturing. This knowledge and process control can be achieved by precise measurement of the total reflectance of the textured cells. Our Helios-rc is the perfect tool to measure, analyze and optimize the widely used chemical texturing processes. It measures the total reflectance of bare and coated solar wafers, as well as the color and layer thickness of coated solar wafers.

Measurement of the Total Spectral Reflectance

Measurement of the total spectral reflectance is a good and accepted method for maintaining a stable texturing process. The texturing affects the average level of the Reflectance and also the amount of spread/variation of the Reflectance over the

wafer. Both, the average Reflectance level and the variation of the Reflectance over the wafer, are important and need to be controlled.

Functions of Helios-rc

Helios-rc systems are designed for precise monitoring and control of texturing and etching processes on solar wafers. These systems measure the total reflectance of the textured front side and the spatial angle reflectance of the back side of the wafer to ensure optimal surface treatment. Additionally, they can measure the thickness of thin layers on either the front or back of the wafer. Available in inline or offline (manual or scan) versions, they provide fast and reliable results for production and laboratory use.

● Single-point measurement √

● Integral total spectral reflectance measurement √

● Wavelength and reflectance value at lowest reflectance √

● Reflectance at user-definable wavelength √

● Coating layer thickness √

● User-definable quality limits √

● Good / Bad indication √

● Integrated fixed reference √

● Average Reflectance within a selectable wavelength interval √

● Color evaluation √

● Manual single axis table √

● Manual full wafer mapping √

Measurement of bare and coated Wafers

● Offline

● Contactless and non-destructive

● Static point by point measurement

Measurement Parameters

● Total Reflectance: r (integral)

● Color: c (Lab, xyY, …)

● Layer Thickness: t (for coated wafer)

Works for all relevant Wafer Types

● mc-wafers (polished, rough or textured)

● pc-wafers (polished, rough or textured)

● 125x125mm / 156x156mm / round / others

Works for all relevant Types of Textures

● Isotropic chemically etched

● Anisotropic chemically etched

● RIE (Reactive Ion Etched)

Easy Operation

● Integrated reference standard

● Manual single-axis table for full wafer mapping

● Easy line scan

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  • TCM Inline

  • TCM offline

TCM INLINE R-NIR-HR1 9ch-m
I Motorized with swiveling measuring heads

● Measurement of the thickness of insulation layers

● Measurement of wet and dry film

● Measurement without referencing

● Individually integrable measuring heads

● Profile scan of the layer (X-axis) with motorized moving measuring head

● Measurement of 2 adjacent tracks

9 measuring heads motorized movable

● Swivel range X-axis: 25 mm

● Manual fine adjustment with adjusters for:

- Z-axis - fine adjustment of working distance

- Tilt fine adjustment relative to the Y-axis

Weight/measuring head

≤ 1 kg

Spectrometer cabinet

● Dimensions [mm]:

H = 830,W =660,D = 625

● Weight: 58 kg

● Electrical data:

- Voltage: 100 - 240 VAC

- Frequency: 50 - 60 Hz

- Max. power consumption: 400 VA

Certification

Measuring system complies with the safety requirements of the Machinery Directive 2006/42/EC.

A UL certification is also available.If needed, please contact us.

TCM LITE R-NIR
I Compact, manually operated tabletop device

● Measurement of dry film

● Integrated PC (also available without PC)

Measuring sample sizes

For use in moving sample frame:

● Minimum: 20 × 20 mm

● Maximum (with sample frame): 245 × 245 mm

● Maximum (without sample frame): 600 × 600 mm

Measurement table

● Dimensions: 600 × 600 mm

● Sample frame: 245 × 245 mm

General data

● Dimensions [mm]:

H = 442,B =604,T = 660

● Weight: 45 kg

● Electrical data:

- Voltage: 100 - 240 VAC

- Frequency: 50 - 60 Hz

- Max. power consumption: 460 VA

Certification

Measuring system complies with the safety requirements of the Low Voltage Directive 2014/35/EU.

A UL certification is also available.If needed, please contact us.

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  • XELAS

  • METIS

  • ARC

Inline & offline measurement of thin films thickness and n&k of layers and stacks
Highlights of Xelas INLINE
Measurement of single layers and layer stacks

● Layer thickness 2nm ∼ 3000nm

● Spectral material properties n(λ) and k(λ)

● Surface roughness

Works under real process environments

● Special design of both R- and T-head for highest value stability with respect to distance and tilt tolerances of the samples in production

● Mounting at vacuum coaters: Either measurement through glass windows, or

measuring heads built inside the vacuum chamber

● Contactless and non-destructive

Production-safe inspection setup

● Auto-triggering or I/O with the line

● Monitoring of layer thicknesses in real-time

● Fast measurement speed

Proven for all relevant layers and stacks

● Organic materials

● Dielectric layers

● Metallic and conductive layers

Offline measurement of thickness and n&k is the key to:

● High layer homogeneity over the entire

sample surface

● Material and process design

● Detailed coating analysis

Xelas SCAN enables producers of products with thin film coatings to:

● Keep production conditions stable and increase production/process yield

● Control the product quality by detailed knowledge of local variations and thickness drift, as well as changes in material properties

● Design new materials, processes and layer stacks by the advanced, unique function optical modelling

Spectral Offline and Inline Measuring System

Using Integrating Sphere, for coatings on foils/WEB and on large size glasses

Measuring samples can be wavy and in R2R applications,

fast-moving foils can vibrate

Highlights of Metis-System

High photometric accuracy

● Spectral range:Spectra: < 0,4% (400nm – 1000nm)

● Long-term stability by internal correction channel

● Precise color measurement

Modular Employable

● LITE (Fixed Sample table)

● LAB (Manual operated Sample table)

● SCAN (Automatic Mapping table)

● INLINE (fixed or motorized scanning)

Wide range thickness measurement

● 5nm – 20µm

● Single layers and layer stacks

● Measurement of optical constants n&k

Using integrating sphere with integrated light source

Spectral range:

● 380 – 1070nm

● 360 – 1050nm (option)

● 850 -1700nm (option)

2 spectral ranges combined:

● 360 -1700nm (option)

Awesome tolerance for sample distance variation and sample tilt

● ±5 mm distance variation

● ±2° tilt variation

High measuring rate

● < 0.1 sec/point (spectra acquisition)

ARC ETA-ARC / ETA-ARC-AT

Process control and quality, with non-destructive sampling

The only truly effective way to meet quality goals and achieve cost effective production is to apply comprehensive non-destructive testing.

NXT offers a unique contactless measurement instrument that can quickly and accurately measures spectral reflectance and color appearance of anti-reflective (AR) coatings, or coating layer thickness of hard coatings and varnishes on transparent and translucent curved surfaces.

The ETA-ARC-AT is the best tool for the job, because:

● It successfully suppresses rear-side surface reflection, which eliminates the need to roughen or blacken the sample. This means that tested products can also be sold.

● Fast measurement of spectral reflectance, and evaluation of layer thickness and colorimetric data, enables larger QA samplings to be made – 100% if so desired.

● Comprehensive measurement documentation supports traceability and repeatability, making continuous process improvement possible.

The ETA-ARC-AT system consists of a spectrometer for the visible spectral range, a light source, and a unique proprietary sensing head. Light source and spectrometer are integrated in a desktop housing, and connected to the sensing head via optical fiber and electronics cables.

Integrated focus and tilt sensors respectively achieve the best possible photometric accuracy and repeatability, and ensure that reflected light always enters the detector aperture correctly, regardless of the curvature of the measured object.
The result of nearly two decades of spectrometer development and testing, followed by use in high-precision production environments, the instrument carefully records the reflectance spectra. Interpretation is then performed by a sophisticated software, which includes tools for calibration, data acquisition, and data evaluation. All acquired and evaluated data can be stored for documentation or exported to other applications.
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